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| Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 -0.03 1.000.05 0.800.05 For high-speed switching Features * Low collector-emitter saturation voltage VCE(sat) * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing Unit: mm 0.12+0.03 -0.01 3 1.600.05 0.85+0.05 -0.03 1 0.270.02 2 (0.50)(0.50) 0 to 0.02 (0.80) Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PC Tj Tstg Rating 40 40 5 100 300 125 125 -55 to +125 Unit V V V mA mA mW C C 5 0.70+0.05 -0.03 5 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Marking Symbol: 2Y Electrical Characteristics Ta = 25C 3C Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Refer to the measurement circuit Min Typ Max 0.1 0.1 Unit A A V V MHz pF ns ns ns 60 0.17 200 0.25 1.0 450 2 17 17 10 6 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Turn-off time Storage time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 120 R 90 to 200 No-rank 60 to 200 Product of no-rank is not classified and have no indication for rank. 0.10 max. (0.375) Publication date: January 2003 SJC00282BED 1 2SC4691J Measurement circuit ton , toff test circuit 220 VIN = 10 V 3.3 k 50 3.3 k VBB = -3 V 0.1 F VOUT A 50 VCC = 3 V VIN = 10 V 0.1 F 50 910 500 500 VBB = 2 V 1 k 90 VCC = 10 V tstg test circuit 0.1 F VOUT 10% VIN 10% 90% VOUT 90% ton toff VOUT tstg VIN 10% 10% (Waveform at A) PC Ta 150 250 IC VCE Collector-emitter saturation voltage VCE(sat) (V) 1 VCE(sat) IC Ta = 25C IC / IB = 10 Collector power dissipation PC (mW) 125 IB = 8 mA 200 100 Collector current IC (mA) 7 mA 6 mA 5 mA 4 mA 3 mA 2 mA Ta = 75C 150 -25C 0.1 25C 75 100 1 mA 50 50 25 0 0 25 50 75 100 125 150 0 0 1 2 3 4 5 6 0.01 0.1 1 10 100 1 000 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) VBE(sat) IC 10 hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 160 140 VCE = 1 V Cob VCB 100 f = 1 MHz Ta = 25C Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 Forward current transfer ratio hFE Ta = 75C 120 100 80 60 40 20 25C 10 1 -25C Ta = 75C 25C -25C 1 0.1 0.1 1 10 100 0 0.1 1 10 100 1 000 0.1 0 5 10 15 20 25 30 35 Collector current IC (mA) Collector current IC (mA) Collector-base voltage VCB (V) 2 SJC00282BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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